80 citations · 334 across the 26 of their papers we have counts for
4 papers · 1 filter
Gate modulation of the hole singlet-triplet qubit frequency in germanium
John Rooney, Zhentao Luo, Lucas E. A. Stehouwer +3
Spin qubits in germanium gate-defined quantum dots have made considerable progress within the last few years, partially due to their strong spin-orbit coupling and site-dependent $…
Low disorder and high valley splitting in silicon
Davide Degli Esposti, Lucas E. A. Stehouwer, Önder Gül +13
The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the…
A vertical gate-defined double quantum dot in a strained germanium double quantum well
Hanifa Tidjani, Alberto Tosato, Alexander Ivlev +6
Gate-defined quantum dots in silicon-germanium heterostructures have become a compelling platform for quantum computation and simulation. Thus far, developments have been limited t…
Germanium wafers for strained quantum wells with low disorder
Lucas E. A. Stehouwer, Alberto Tosato, Davide Degli Esposti +4
We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-…