3 papers
cond-mat.mes-hall2022
Large inverted band-gap in strained three-layer InAs/GaInSb quantum wells
C. Avogadri, S. Gebert, S. S. Krishtopenko +17
Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a b…
cond-mat.mtrl-sci2020
Determination of carrier density and dynamics via magneto-electroluminescence spectroscopy in resonant tunneling diodes
E. R. Cardozo de Oliveira, A. Naranjo, A. Pfenning +6
We study the magneto-transport and magneto-electroluminescence properties of purely n-doped GaAs/AlGaAs resonant tunneling diodes with an InGaAs q…
cond-mat.mtrl-sci2018
Electroluminescence on-off ratio control of n-i-n GaAs/AlGaAs-based resonant tunneling structures
E. R. Cardozo de Oliveira, A. Pfenning, E. D. Guarin +7
We explore the nature of the electroluminescence (EL) emission of purely n-doped GaAs/AlGaAs resonant tunneling diodes (RTDs) and the EL evolution with voltage. A singular feature…