10 citations · 30 across the 6 of their papers we have counts for
6 papers
Lingering Times at Resonance: The Case of Sb-based Tunneling Devices
Edgar David Guarin Castro, Andreas Pfenning, Fabian Hartmann +7
Concurrent natural time scales related to relaxation, recombination, trapping, and drifting processes rule the semiconductor heterostructures' response to external drives when char…
Linear colossal magnetoresistance driven by magnetic textures in LaTiO3 thin films on SrTiO3
Teresa Tschirner, Berengar Leikert, Felix Kern +12
Linear magnetoresistance (LMR) is of particular interest for memory, electronics, and sensing applications, especially when it does not saturate over a wide range of magnetic field…
Large inverted band-gap in strained three-layer InAs/GaInSb quantum wells
C. Avogadri, S. Gebert, S. S. Krishtopenko +17
Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a b…
Determination of carrier density and dynamics via magneto-electroluminescence spectroscopy in resonant tunneling diodes
E. R. Cardozo de Oliveira, A. Naranjo, A. Pfenning +6
We study the magneto-transport and magneto-electroluminescence properties of purely n-doped GaAs/AlGaAs resonant tunneling diodes with an InGaAs q…
Electroluminescence on-off ratio control of n-i-n GaAs/AlGaAs-based resonant tunneling structures
E. R. Cardozo de Oliveira, A. Pfenning, E. D. Guarin +7
We explore the nature of the electroluminescence (EL) emission of purely n-doped GaAs/AlGaAs resonant tunneling diodes (RTDs) and the EL evolution with voltage. A singular feature…
Gate-tunable, normally-on to normally-off memristance transition in patterned LaAlO3/SrTiO3 interfaces
Patrick Maier, Fabian Hartmann, Judith Gabel +8
We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gat…