2 citations · 2 across the 1 of their papers we have counts for
3 papers
Light absorption and emission by defects in doped nickel oxide
Robert Karsthof, Ymir Kalmann Frodason, Augustinas Galeckas +3
Nickel oxide is a versatile p-type semiconducting oxide with many applications in opto-electronic devices, but high doping concentrations are often required to achieve necessary el…
Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC
Robert Karsthof, Marianne Etzelmüller Bathen, Augustinas Galeckas +1
The development of defect populations after proton irradiation of n-type 4H-SiC and subsequent annealing experiments is studied by means of deep level transient (DLTS) and photolum…
Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study
Patricia Almeida Carvalho, Annett Thørgesen, Quanbao Ma +9
Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar…