11 citations · 18 across the 9 of their papers we have counts for
9 papers
Highly Lattice-Mismatched Selective Area Epitaxy and Coalescence of PbSe Nanostructures on GaAs
Ashlee M. García, Hosni A. Kaissi, Jarod E. Meyer +9
Selective area growth of PbSe has the potential to realize deterministic placement of high-density, defect-tolerant nanostructure networks toward a scalable quantum platform. PbSe…
Multivalley 3D Electronic Structure of PbSe from Soft-X-Ray ARPES and First-Principles Calculations
Zefeng Cai, Valentine V. Volobuev, Jędrzej Korczak +7
PbSe is a narrow-gap IV-VI semiconductor, whose multivalley valence bands, with maxima at the L, , and points, underpin its intermediate-temperature thermoelectric propertie…
Tunable anharmonicity in Sn-InAs nanowire transmons beyond the short junction limit
Amrita Purkayastha, Amritesh Sharma, Param J. Patel +11
The anharmonicity of a transmon qubit, defined as the difference in energy level spacing, is a key design parameter. In transmons built from hybrid superconductor-semiconductor Jos…
Cryogenic growth of aluminum: structural morphology, optical properties, superconductivity and microwave dielectric loss
Wilson J. Yánez-Parreño, Teun A. J. van Schijndel, Anthony P. McFadden +7
We explore the molecular beam epitaxy synthesis of superconducting aluminum thin films grown on c-plane sapphire substrates at cryogenic temperatures of 6 K and compare their behav…
Transmon qubit using Sn as a junction superconductor
Amrita Purkayastha, Amritesh Sharma, Param J. Patel +11
Superconductor qubits typically use aluminum-aluminum oxide tunnel junctions to provide the non-linear inductance. Junctions with semiconductor barriers make it possible to vary th…
Sn-InAs nanowire shadow-defined Josephson junctions
Amritesh Sharma, An-Hsi Chen, Connor P. Dempsey +6
Interest in hybrid electronic devices for quantum science is driving the research into superconductor-semiconductor materials combinations. Here we study InAs nanowires coated with…
Role of a capping layer on the crystalline structure of Sn thin films grown at cryogenic temperatures on InSb substrates
A. -H. Chen, C. P. Dempsey, M. Pendharkar +8
Metal deposition with cryogenic cooling is widely utilized in the condensed matter community for producing ultra-thin epitaxial superconducting layers on semiconductors. However, a…
Planar Josephson Junctions Templated by Nanowire Shadowing
P. Zhang, A. Zarassi, M. Pendharkar +16
More and more materials, with a growing variety of properties, are built into electronic devices. This is motivated both by increased device performance and by the studies of mater…
Hysteretic magnetoresistance in nanowire devices due to stray fields induced by micromagnets
Y. Jiang, E. J. de Jong, V. van de Sande +4
We study hysteretic magnetoresistance in InSb nanowires due to stray magnetic fields from CoFe micromagnets. Devices without any ferromagnetic components show that the magnetoresis…