most citedStudy of p-type silicon MOS capacitors at HL-LHC radiation levels through cobalt-60 gamma source and TCAD simulation

2 citations · 2 across the 1 of their papers we have counts for

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2 papers

physics.ins-det2021★ 2 cited

Study of p-type silicon MOS capacitors at HL-LHC radiation levels through cobalt-60 gamma source and TCAD simulation

Patrick Asenov, Panagiotis Assiouras, Argiro Boziari +7

During the era of the High Luminosity LHC (HL-LHC) the devices in its experiments will be subjected to increased radiation levels with high fluxes of neutrons and charged hadrons,…

physics.ins-det2020

Fast calculation of capacitances in silicon sensors with 3D and 2D numerical solutions of the Laplace's equation and comparison with experimental data and TCAD simulations

P. Assiouras, P. Asenov, A. Kyriakis +1

We have developed a software for fast calculation of capacitances in planar silicon pixel and strip sensors, based on 3D and 2D numerical solutions of the Laplace's equation. The v…