T. Nagata

collaborators

4 papers

cond-mat.mtrl-sci2021

The electrical conductivity of cubic (In $_{1 - x}$ Ga $_{x}$ ) $_{2}$ O $_{3}$ films ( $x \leq 0.18$ ): Native point defects, Sn-doping, and the surface electron accumulation layer

Alexandra Papadogianni, Takahiro Nagata, Oliver Bierwagen

The alloying of the group-III transparent semiconducting sesquioxides In $_{2}$ O $_{3}$ and Ga $_{2}$ O $_{3}$ can lead to a modulation of the properties of the parent compounds, e.g., the shal…

cond-mat.mtrl-sci2021

Molecular beam epitaxy of single-crystalline bixbyite (In $_{1 - x}$ Ga $_{x}$ ) $_{2}$ O $_{3}$ films ( $x \leq 0.18$ ): Structural properties and consequences of compositional inhomogeneity

Alexandra Papadogianni, Charlotte Wouters, Robert Schewski +9

In this work, we show the heteroepitaxial growth of single-crystalline bixbyite (In $_{1 - x}$ Ga $_{x}$ ) $_{2}$ O $_{3}$ films on (111)-oriented yttria-stabilized zirconia substrates using plas…

cond-mat.mtrl-sci2021

Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga) $_{2}$ O $_{3}$ alloy films

Johannes Feldl, Martin Feneberg, Alexandra Papadogianni +5

The influence of Ga incorporation into cubic In $_{2}$ O $_{3}$ on the electronic and vibrational properties is discussed for (In $_{1 - x}$ ,Ga $_{x}$ ) $_{2}$ O $_{3}$ alloy films grown by molecular b…

cond-mat.mtrl-sci2020

Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass

Melanie Budde, Piero Mazzolini, Johannes Feldl +6

Transparent conducting or semiconducting oxides are important materials for (transparent) optoelectronics and power electronics applications. While most of these oxides can be dope…

The electrical conductivity of cubic (In1−x​Gax​)2​O3​ films (x≤0.18): Native point defects, Sn-doping, and the surface electron accumulation layer

Molecular beam epitaxy of single-crystalline bixbyite (In1−x​Gax​)2​O3​ films (x≤0.18): Structural properties and consequences of compositional inhomogeneity

Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga)2​O3​ alloy films

Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass

The electrical conductivity of cubic (In $_{1 - x}$ Ga $_{x}$ ) $_{2}$ O $_{3}$ films ( $x \leq 0.18$ ): Native point defects, Sn-doping, and the surface electron accumulation layer

Molecular beam epitaxy of single-crystalline bixbyite (In $_{1 - x}$ Ga $_{x}$ ) $_{2}$ O $_{3}$ films ( $x \leq 0.18$ ): Structural properties and consequences of compositional inhomogeneity

Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga) $_{2}$ O $_{3}$ alloy films