82 citations · 89 across the 6 of their papers we have counts for
7 papers
Mid-Infrared Thermal Radiation Harvesting using Uncooled Narrow Bandgap GeSn Thermophotovoltaic cell
Gérard Daligou, Mahmoud R. M. Atalla, Cédric Lemieux-Leduc +4
Thermophotovoltaic (TPV) cells are increasingly attractive for applications in industrial waste heat harvesting, aerospace energy management, and compact power generation. Deployin…
Polarization-sensitive GeSn Mid-Infrared Membrane Photodetectors with Integrated Plasmonic Metasurface
Ziqiang Cai, Cédric Lemieux-Leduc, Mahmoud R. M. Atalla +4
Germanium-Tin (GeSn) semiconductors are promising for mid-infrared optoelectronics owing to their silicon compatibility, tunable bandgap, and potential for room-temperature operati…
Waveguide-Coupled Mid-Infrared GeSn Membrane Photodetectors on Silicon-on-Insulator
Cédric Lemieux-Leduc, Mahmoud R. M. Atalla, Simone Assali +5
Silicon photonics has thrived in telecommunications over recent decades, and its extension to the mid-infrared range has the potential to unlock valuable opportunities for sensing,…
Transfer-printed multiple GeSn membrane mid-infrared photodetectors
Cédric Lemieux-Leduc, Mahmoud R. M. Atalla, Simone Assali +8
Due to their narrow band gap and compatibility with silicon processing, germanium-tin (GeSn) alloys are a versatile platform for scalable integrated mid-infrared photon…
Extended-SWIR High-Speed All-GeSn PIN Photodetectors on Silicon
Mahmoud R. M. Atalla, Cedric Lemieux-Leduc, Simone Assali +3
There is an increasing need for silicon-compatible high bandwidth extended-short wave infrared (e-SWIR) photodetectors (PDs) to implement cost-effective and scalable optoelectronic…
Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics
Simone Assali, Anis Attiaoui, Sebastian Koelling +6
A true monolithic infrared photonics platform is within reach if strain and bandgap energy can be independently engineered in SiGeSn semiconductors. Herein, we investigate the stru…
All-Group IV membrane room-temperature mid-infrared photodetector
Mahmoud R. M. Atalla, Simone Assali, Anis Attiaoui +4
Strain engineering has been a ubiquitous paradigm to tailor the electronic band structure and harness the associated new or enhanced fundamental properties in semiconductors. In th…