173 citations · 254 across the 16 of their papers we have counts for
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Density functional theory study of effect of NO annealing on electronic structure and carrier-scattering property of 4H-SiC(0001)/SiO interface
Nahoto Funaki, Kosei Sugiyama, Mitsuharu Uemoto +1
The effect of the nitrided layer introduced by NO annealing on the electronic structure and carrier scattering property of the 4H-SiC(0001)/SiO interface is investigated by the…
Theoretical investigation of interface atomic structure of graphene on NiFe alloy substrate
Naohiro Matsumoto, Ryusuke Endo, Mitsuharu Uemoto +1
Two processes have been proposed to fabricate graphene/NiFe alloy interfaces for tunneling magnetoresistance devices. One is the transfer of graphene and the other is the evaporati…
Oxygen-induced Fe surface segregation at the -FePd(001)/graphene heterointerface for spintronics devices: a first-principles study
Mitsuharu Uemoto, Naohiro Matsumoto, Ryusuke Endo +5
We theoretically investigate the atomic-scale structure of the heterointerface formed between the (001) surface of the -ordered iron palladium (FePd) intermetallic alloy and…
First-principle study of spin transport property in -FePd(001)/graphene heterojunction
Hayato Adachi, Ryuusuke Endo, Hikari Shinya +3
In our previous work, we synthesized a metal/2D material heterointerface consisting of -ordered iron-palladium (FePd) and graphene (Gr) called FePd(001)/Gr. This system has b…
Density functional theory study on effect of NO annealing for SiC(0001) surface with atomic-scale steps
Mitsuharu Uemoto, Nahoto Funaki, Kazuma Yokota +2
Density functional theory calculations for the electronic structures of the 4H-SiC(0001)/SiO interface with atomic-scale steps are carried out to investigate the effect of NO a…
Density functional theory calculations for investigation of atomic structures of 4H-SiC/SiO interface after NO annealing
Naoki Komatsu, Mizuho Ohmoto, Mitsuharu Uemoto +1
We propose the atomic structures of the 4H-SiC/SiO interface for the , , C, and Si faces after NO annealing. Our proposed structures preferentially form at the topmost la…
Theoretical investigation of vacancy related defects at 4H-SiC(000)/SiO interface after wet oxidation
Mukai Tsunasaki, Tomoya Ono, Mitsuharu Uemoto
The stability and formation mechanism of the defects relevant to silicon and carbon vacancies at the 4H-SiC(000)/SiO interface after wet oxidation are investigated by…
Density functional study of twisted graphene -FePd heterogeneous interface
Mitsuharu Uemoto, Hayato Adachi, Hiroshi Naganuma +1
Graphene on -FePd(001), which has been experimentally studied in recent years, is a heterogeneous interface with a significant lattice symmetry mismatch between the honeycomb…
First-principles study on structure and anisotropy of high N-atom density layer in 4H-SiC
Mitsuharu Uemoto, Naoki Komatsu, Yoshiyuki Egami +1
A nitridation annealing process is well employed to reduce interface trap states that degrade the channel mobility of 4H-SiC/SiO metal-oxide-semiconductor field-effect transi…
Attosecond state-resolved carrier motion in quantum materials probed by soft X-ray XANES
Barbara Buades, Antonio Picon, Emma Berger +16
Recent developments in attosecond technology led to tabletop X-ray spectroscopy in the soft X-ray range, thus uniting the element- and state-specificity of core-level x-ray absorpt…