activity
20202026
most citedQuantum Sensing of Insulator-to-Metal Transitions in a Mott Insulator

9 citations · 26 across the 16 of their papers we have counts for

collaborators

17 papers

physics.app-ph2026

Phase noise analysis and control of VO-based relaxation type oscillators

Artem Litvinenko, Erbin Qiu, Sambit Ghosh +5

VO-based relaxation oscillators form a rapidly developing field that finds applications in neuromorphic computing, Ising machines, and numerous signal processing concepts. Thes…

cond-mat.mtrl-sci2026

Signal amplification in simple metal-insulator transition devices

Victor Palin, Nareg Ghazikhanian, Matthew Frame +3

Signal dissipation in large-scale neural networks can lead to information loss and ultimately to computational failures, necessitating local signal amplification at neuron - synaps…

cond-mat.mtrl-sci2026

Inhibitory neuristor based on metal-to-insulator transition

Victor Palin, Akash Agnihotri, Nareg Ghazikhanian +4

Mimicking the collective excitatory and inhibitory behaviors of biological neurons remains a critical challenge in the development of neuromorphic computing systems that rival the…

cond-mat.str-el2026

Disorder-driven stochastic dynamics in Mott resistive-switching systems

David J. Alspaugh, Lorenzo Fratino, Nareg Ghazikhanian +2

Controlled disorder in correlated materials provides a new route to emergent stochastic dynamics in neuromorphic hardware. Here we show that focused ion beam irradiation in VO$_{2}…

cond-mat.mes-hall2026

Jamming-controlled stochasticity in metal-insulator switching

Nicolò D'Anna, Nareg Ghazikhanian, Katherine Matthews +5

Understanding and controlling phase transitions is a fundamental part of physics and has been central to many technological revolutions, from steam engines to field-effect transist…

cond-mat.str-el2025

Electrically induced ferromagnetism in an irradiated complex oxide

Nareg Ghazikhanian, Pavel Salev, Dayne Sasaki +2

In metal-insulator transition materials, a small perturbation can shift the delicate balance between competing or coexisting electronic phases, leading to dramatic changes of the m…

cond-mat.dis-nn2025

Enhanced stochasticity in irradiated vanadium oxide oscillators

Nareg Ghazikhanian, David J. Alspaugh, Pavel Salev +3

Insulator-to-metal transition materials are highly sensitive to even minute deviations of stoichiometry, lattice defects, and disorder, which provides opportunities to engineer the…

cond-mat.mes-hall2025

Self-strain suppression of the metal-to-insulator transition in phase-change oxide devices

Nicolò D'Anna, Nareg Ghazikhanian, Erik S. Lamb +5

Quantum materials exhibiting phase transitions which can be controlled through external stimuli, such as electric fields, are promising for future computing technologies beyond con…

physics.app-ph2024★ 8 cited

Voltage control of spin resonance in phase change materials

Tian-Yue Chen, Haowen Ren, Nareg Ghazikhanian +6

Metal-insulator transitions (MITs) in resistive switching materials can be triggered by an electric stimulus that produces significant changes in the electrical response. When thes…

physics.soc-ph2024★ 4 cited

The sounds of science a symphony for many instruments and voices part II

Gerard t Hooft, William D Phillips, Anton Zeilinger +22

Despite its amazing quantitative successes and contributions to revolutionary technologies, physics currently faces many unsolved mysteries ranging from the meaning of quantum mech…

cond-mat.str-el2024

Laser-induced quenching of metastability at the Mott-insulator to metal transition

Theodor Luibrand, Lorenzo Fratino, Farnaz Tahouni-Bonab +7

There is growing interest in strongly correlated insulator thin films because the intricate interplay of their intrinsic and extrinsic state variables causes memristive behavior th…

cond-mat.mtrl-sci2023★ 1 cited

Domain nucleation across the metal-insulator transition of self-strained V2O3 films

Alexandre Pofelski, Sergio Valencia, Yoav Kalcheim +8

Bulk V2O3 features concomitant metal-insulator (MIT) and structural (SPT) phase transitions at TC ~ 160 K. In thin films, where the substrate clamping can impose geometrical restri…

cond-mat.dis-nn2023

Collective dynamics and long-range order in thermal neuristor networks

Yuan-Hang Zhang, Chesson Sipling, Erbin Qiu +2

In the pursuit of scalable and energy-efficient neuromorphic devices, recent research has unveiled a novel category of spiking oscillators, termed "thermal neuristors." These devic…

cond-mat.str-el2023★ 2 cited

Disentangling transport mechanisms in a correlated oxide by photoinduced charge injection

Henry Navarro, Sarmistha Das, Felipe Torres +6

We present a novel heterostructured approach to disentangle the mechanism of electrical transport of the strongly correlated PrNiO3, by placing the nickelate under the photoconduct…

cond-mat.mtrl-sci2023★ 1 cited

Local strain inhomogeneities during the electrical triggering of a metal-insulator transition revealed by the x-ray microscopy

Pavel Salev, Elliot Kisiel, Dayne Sasaki +10

Electrical triggering of a metal-insulator transition (MIT) often results in the formation of characteristic spatial patterns such as a metallic filament percolating through an ins…

physics.app-ph2023★ 1 cited

High-Resolution Full-field Structural Microscopy of the Voltage Induced Filament Formation in Neuromorphic Devices

Elliot Kisiel, Pavel Salev, Ishwor Poudyal +7

Neuromorphic functionalities in memristive devices are commonly associated with the ability to electrically create local conductive pathways by resistive switching. The archetypal…

cond-mat.mes-hall2020★ 9 cited

Quantum Sensing of Insulator-to-Metal Transitions in a Mott Insulator

Nathan J. McLaughlin, Yoav Kalcheim, Albert Suceava +3

Nitrogen vacancy (NV) centers, optically-active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their…