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cond-mat.mtrl-sci2026
Unraveling the electronic structure of silicon vacancy centers in 4H-SiC
Ali Tayefeh Younesi, Minh Tuan Luu, Christopher Linderälv +7
Point defects in silicon carbide (SiC), particularly the negatively-charged silicon vacancy () in 4H-SiC, are leading candidates for scalable quantum technolog…
cond-mat.mtrl-sci2020
Photoluminescence Lineshapes for Color Centers in Silicon Carbide from Density Functional Theory Calculations
Arsalan Hashemi, Christopher Linderalv, Arkady V. Krasheninnikov +3
Silicon carbide with optically and magnetically active point defects offers unique opportunities for quantum technology applications. Since interaction with these defects commonly…
cond-mat.mtrl-sci2020
Luminescence quenching via deep defect states: A recombination pathway via oxygen vacancies in Ce-doped YAG
Christopher Linderälv, Daniel Åberg, Paul Erhart
Luminescence quenching via non-radiative recombination channels limits the efficiency of optical materials such as phosphors and scintillators and therefore has implications for co…