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cond-mat.mes-hall2023★ 1 cited
Field-Effect Transistors based on 2-D Materials: a Modeling Perspective
Mathieu Luisier, Cedric Klinkert, Sara Fiore +4
Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D…
cond-mat.mes-hall2020★ 25 cited
Ab initio mobility of mono-layer MoS2 and WS2: comparison to experiments and impact on the device characteristics
Youseung Lee, Sara Fiore, Mathieu Luisier
We combine the linearized Boltzmann Transport Equation (LBTE) and quantum transport by means of the Non-equilibrium Green's Functions (NEGF) to simulate single-layer MoS2 and WS2 u…