5 citations · 10 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2023★ 5 cited
Atomic scale localization of Kohn-Sham wavefunction at SiO2/4H-SiC interface under electric field, deviating from envelope function by effective mass approximation
Hironori Yoshioka, Jun-Ichi Iwata, Yu-ichiro Matsushita
To clarify the cause of the low channel conductivity at the SiO2/4H-SiC interface, the wavefunction at the SiC conduction band minimum was calculated using density functional theor…
cond-mat.mtrl-sci2020★ 5 cited
Determination of the Interface between Amorphous Insulator and Crystalline 4H-SiC in Transmission Electron Microscope Image by using Convolutional Neural Network
Hironori Yoshioka, Tomonori Honda
A rough interface seems to be one of the possible reasons for low channel mobility (conductivity) in SiC MOSFETs. To evaluate the mobility by interface roughness, we drew a boundar…