Yanfeng Guo

most citedElectronic structure of the high-mobility two-dimensional antiferromagnetic metal GdTe

_{3}

1 citations · 1 across the 1 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2020★ 1 cited

Electronic structure of the high-mobility two-dimensional antiferromagnetic metal GdTe $_{3}$

J. S. Liu, S. C. Huan, Z. H. Liu +10

The new-found two-dimensional antiferromagnetic GdTe $_{3}$ is attractive owing to its highest carrier mobility among all known layered magnetic materials, as well as its potential ap…

cond-mat.str-el2018

Evidence for $J_{eff} = 0$ ground state and defect-induced spin glass behaviour in the pyrochlore osmate Y $_{2}$ Os $_{2}$ O $_{7}$

N. R. Davies, C. V. Topping, H. Jacobsen +14

We present AC and DC magnetometry, heat capacity, muon spin relaxation ( $μ$ SR) and resonant inelastic X-ray scattering (RIXS) studies of the pyrochlore osmate Y $_{2}$ Os $_{2}$ O $_{7}$ . We…

Electronic structure of the high-mobility two-dimensional antiferromagnetic metal GdTe3​

Evidence for Jeff​=0 ground state and defect-induced spin glass behaviour in the pyrochlore osmate Y2​Os2​O7​

Electronic structure of the high-mobility two-dimensional antiferromagnetic metal GdTe $_{3}$

Evidence for $J_{eff} = 0$ ground state and defect-induced spin glass behaviour in the pyrochlore osmate Y $_{2}$ Os $_{2}$ O $_{7}$