23 citations · 30 across the 4 of their papers we have counts for
5 papers
Electrically-pumped near-infrared VCSEL epitaxially-grown on Si
Guilhem Almuneau, Alexandre Arnoult, Karim Ben Saddik +8
The monolithic integration of compact laser sources onto silicon remains a critical bottleneck for the scalable development of silicon photonics. In particular, the direct epitaxia…
940-nm VCSELs grown by molecular beam epitaxy on Ge(001)
Karim Ben Saddik, Alexandre Arnoult, Pierre Gadras +5
Vertical-cavity surface-emitting laser (VCSEL) structures emitting near 940 nm were grown by solid source molecular beam epitaxy (MBE) on Ge(001) substrates. The VCSEL MBE-growth w…
Impact of impurities on leakage current induced by High-Energy Density Pulsed Laser Annealing in Si diodes
Richard Monflier, Richard Daubriac, Mahmoud Haned +9
For semiconductor device fabrication, Pulsed Laser Annealing (PLA) offers significant advantages over conventional thermal processes. Notably, it can provide ultrafast (~ns) and hi…
Large-Scale Epitaxial Integration of Single-Crystalline BiSb Topological Insulator on GaAs (111)A
Mohamed Ali Khaled, Leonardo Cancellara, Salima Fekraoui +8
Topological insulators (TI) are promising materials for future spintronics applications and their epitaxial integration would allow the realization of new hybrid interfaces. As the…
Hyper-doped silicon nanoantennas and metasurfaces for tunable infrared plasmonics
Jean-Marie Poumirol, Clément Majorel, Nicolas Chery +11
We present the experimental realization of ordered arrays of hyper-doped silicon nanodisks, which exhibit a localized surface plasmon resonance. The plasmon is widely tunable in a…