23 citations · 40 across the 8 of their papers we have counts for
9 papers
Fine structure of the M-center in Si
Aurora Teien, David R. Gongora, Arnulf Johannes Snedker-Nielsen +6
Color centers in silicon offer great possibilities for scalable quantum technologies. The M-center, proposed to originate from a carbon-hydrogen complex, offers telecommunications-…
Epitaxial single T centres in silicon-on-insulator
Christian H. Christiansen, Kasper H. Nielsen, Alisha Nanwani +26
Spin-photon interfaces based on silicon quantum emitters offer a scalable platform for quantum computing and networking. However, achieving coherent photon emission remains a prima…
Identification of the I Donor in ZnO as a Sn--Li Complex with Large Hyperfine Interaction
Xingyi Wang, Sai Mu, Jeong Rae Kim +6
Donor impurities in wide direct band gap semiconductors provide a promising platform for spin--photon quantum technologies by combining a donor spin qubit with optically addressabl…
Spin-active chlorine-related centers in 4H-SiC with telecom-band emissions
Danial Shafizadeh, Misagh Ghezellou, Viktor M. Bobal +5
A photoluminescence (PL) and magnetic resonance investigation of a defect in chlorine-implanted 4H-SiC is presented. This Cl-related center emits light at telecom wavelengths with…
Impact of strain on electron-phonon coupling of quantum emitters
Vytautas Žalandauskas, Rokas Silkinis, Lukas Razinkovas +6
Defects in semiconductors acting as optically active spin qubits are intriguing objects of fundamental study and future technological developments. These defect-based color centers…
Colour Centre Formation in Silicon-On-Insulator for On-Chip Photonic Integration
Arnulf J. Snedker-Nielsen, David R. Gongora, Magnus L. Madsen +12
Colour centres in silicon have great potential as single photon sources for quantum technologies. Some of them - like the T centre - also possess optically-active spins that enable…
Theory of the divacancy in 4H-SiC: Impact of Jahn-Teller effect on optical properties
Vytautas Žalandauskas, Rokas Silkinis, Lasse Vines +2
Understanding the optical properties of color centers in silicon carbide is essential for their use in quantum technologies, such as single-photon emission and spin-based qubits. I…
Optical lineshapes of the C-center in silicon from ab initio calculations: Interplay of localized modes and bulk phonons
Rokas Silkinis, Marek Maciaszek, Vytautas Žalandauskas +4
In this work, we present a first-principles density functional theory (DFT) computational investigation of the luminescence and absorption lineshapes associated with the neutral ca…
Strain modulation of Si vacancy emission from SiC micro- and nanoparticles
G. C. Vásquez, M. E. Bathen, A. Galeckas +8
Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particle…