17 citations · 18 across the 5 of their papers we have counts for
5 papers
XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates
Eungkyun Kim, Yu-Hsin Chen, Naomi Pieczulewski +4
AlN has the largest bandgap in the wurtzite III-nitride semiconductor family, making it an ideal barrier for a thin GaN channel to achieve strong carrier confinement in field-effec…
Ferroelectric AlBN Films by Molecular Beam Epitaxy
Chandrashekhar Savant, Ved Gund, Kazuki Nomoto +13
We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode Nb2N. While a control AlN thin film exhibits…
Leveraging both faces of polar semiconductor wafers for functional devices
Len van Deurzen, Eungkyun Kim, Naomi Pieczulewski +8
Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a un…
Material selection method for a perovskite solar cell design based on the genetic algorithm
Eungkyun Kim, Indranil Bhattacharya
In this work, we propose a method of selecting the most desirable combinations of material for a perovskite solar cell design utilizing the genetic algorithm. Solar cells based on…
Adaptive Step Size Incremental Conductance Based Maximum Power Point Tracking (MPPT)
Eungkyun Kim, Morgan Warner, Indranil Bhattacharya
Extracting maximum power available from photovoltaic arrays requires the system operating at the maximum power point (MPP). Therefore, finding the MPP is necessary for efficient op…