most citedRaman spectroscopy of epitaxial graphene on a SiC substrate

551 citations · 1.3k across the 6 of their papers we have counts for

collaborators

6 papers

physics.optics200934 cited

Atomic layer graphene as saturable absorber for ultrafast pulsed lasers

Qiaoliang Bao, Han Zhang, Yu Wang +5

The optical conductance of monolayer graphene is defined solely by the fine structure constant. The absorbance has been predicted to be independent of frequency. In principle, the…

cond-mat.mtrl-sci2008

Fabrication of graphene nanodisk arrays using nanosphere lithography

C. X. Cong, T. Yu, Z. H. Ni +3

Ordered graphene nanodisk arrays have been successfully fabricated by combining nanosphere lithography (NSL) and reactive ion etching (RIE) processes. The dimension of graphene nan…

cond-mat.mtrl-sci20081 cited

Probing charged impurities in suspended graphene using Raman spectroscopy

Zhen Hua Ni, Ting Yu, Zhi Qiang Luo +6

Charged impurity (CI) scattering is one of the dominant factors that affect the carrier mobility in graphene. In this paper, we use Raman spectroscopy to probe the charged impuriti…

cond-mat.mtrl-sci2008291 cited

Reduction of Fermi velocity in folded graphene observed by resonance Raman spectroscopy

Zhenhua Ni, Yingying Wang, Ting Yu +2

The 1+1 layer folded graphene sheets that deviate from AB stacking are successfully fabricated and their electronic structures are investigated by Raman spectroscopy. Significant b…

cond-mat.mtrl-sci2008551 cited

Raman spectroscopy of epitaxial graphene on a SiC substrate

Z. H. Ni, W. Chen, X. F. Fan +4

The fabrication of epitaxial graphene (EG) on SiC substrate by annealing has attracted a lot of interest as it may speed up the application of graphene for future electronic device…

cond-mat.mtrl-sci2008380 cited

Interference enhancement of Raman signal of graphene

Yingying Wang, Zhenhua Ni, Zexiang Shen +2

Raman spectroscopic studies of graphene have attracted much interest. The G-band Raman intensity of a single layer graphene on Si substrate with 300 nm SiO2 capping layer is surpri…