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cond-mat.mes-hall2021
Field-Free Deterministic Writing of SOT-MTJ by Unipolar Current
Tengzhi Yang, Meiyin Yang, Lei Zhao +6
We propose a manufacturable solution for field-free writing of perpendicular SOT-MTJ without sacrificing integration density on a 200 mm wafer. The field-free writing operation can…
cond-mat.mes-hall2021★ 4 cited
Quantum-well tunneling anisotropic magnetoresistance above room temperature
Muftah Al-Mahdawi, Qingyi Xiang, Yoshio Miura +5
Quantum-well (QW) devices have been extensively investigated in semiconductor structures. More recently, spin-polarized QWs were integrated into magnetic tunnel junctions (MTJs). I…