16 citations · 39 across the 7 of their papers we have counts for
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cond-mat.mtrl-sci2024★ 9 cited
Defect density of states of tin oxide and copper oxide p-type thin-film transistors
Måns J. Mattsson, Kham M. Niang, Jared Parker +4
The complete subgap defect density of states (DoS) is measured using the ultrabroadband (0.15 to 3.5 eV) photoconduction response from p-type thin-film transistors (TFTs) of tin ox…
physics.app-ph2024
Order in disorder: increased carrier mobility of downscaled amorphous semiconductors for high-speed thin film transistors in flexible electronics
Yuezhou Luo, Andrew John Flewitt
Amorphous semiconductors are important channel semiconductors in thin film transistors (TFTs) which serve not only active-matrix displays, but also flexible electronics for Interne…
cond-mat.dis-nn2024★ 6 cited
Revisiting multiple trapping and release electronic transport in amorphous semiconductors exemplified by a-Si:H
Yuezhou Luo, Andrew John Flewitt
Multiple trapping and release (MTR) is a typical transport mechanism of electron carriers in amorphous and other disordered semiconductors where localized states are significant. Q…