collaborators

1 paper

cond-mat.mtrl-sci2020

All-MOCVD-Grown Gallium Nitride Diodes with Ultra-Low Resistance Tunnel Junctions

Syed M. N. Hasan, Brendan P. Gunning, Zane J. -Eddine +5

We carefully investigate three important effects including postgrowth activation annealing, delta (δ) dose and p+-GaN layer thickness and experimentally demonstrate their influence…