Characteristics of Al/Ge Schottky and Ohmic contacts at low temperatures

Shreyas Pitale, Manoranjan Ghosh, S. G. Singh +3

Schottky barrier contact has been fabricated by thermal deposition of Al on (100) Ge (impurity concentration~1010/cm3 at 80K) that shows extrinsic p-type to intrinsic n-type transi…