Keigo Nakamura

most citedAll 2D Heterostructure Tunnel Field Effect Transistors: Impact of Band Alignment and Heterointerface Quality

65 citations · 65 across the 1 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2020★ 65 cited

All 2D Heterostructure Tunnel Field Effect Transistors: Impact of Band Alignment and Heterointerface Quality

Keigo Nakamura, Naoka Nagamura, Keiji Ueno +3

Van der Waals heterostructures are the ideal material platform for tunnel field effect transistors (TFETs) because a band-to-band tunneling (BTBT) dominant current is feasible at r…

physics.app-ph2018

2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p $^{+}$ -WSe $_{2}$ Source

Junyang He, Nan Fang, Keigo Nakamura +4

Two-dimensional (2D) materials are highly promising for tunnel field effect transistors (TFETs) with low subthreshold swing and high drive current because the shorter tunnel distan…

All 2D Heterostructure Tunnel Field Effect Transistors: Impact of Band Alignment and Heterointerface Quality

2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p+-WSe2​ Source

2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p $^{+}$ -WSe $_{2}$ Source