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cs.ET2023
Variation-Resilient FeFET-Based In-Memory Computing Leveraging Probabilistic Deep Learning
Bibhas Manna, Arnob Saha, Zhouhang Jiang +2
Reliability issues stemming from device level non-idealities of non-volatile emerging technologies like ferroelectric field-effect transistors (FeFET), especially at scaled dimensi…
cond-mat.str-el2023
Hydrogen-induced tunable remanent polarization in a perovskite nickelate
Yifan Yuan, Michele Kotiuga, Tae Joon Park +18
Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor doping, we modify t…