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physics.app-ph2022★ 1 cited
Could the negative capacitance effect be used in field-effect transistors with a ferroelectric gate?
Eugene A. Eliseev, Anna N. Morozovska, Lesya P. Yurchenko +1
We analyze the distributions of electric potential and field, polarization and charge, and the differential capacitance of a silicon metal-oxide-ferroelectric field effect transist…
cond-mat.mtrl-sci2022
Phase transitions in ferroelectric domain walls
Eugene A. Eliseev, Maya D. Glinchuk, Lesya P. Yurchenko +2
Despite multiple efforts, there exist many unsolved fundamental problems related with detection and analysis of internal polarization structure and related phase transitions in fer…