most citedStress-controlled zero-field spin splitting in silicon carbide

21 citations · 69 across the 5 of their papers we have counts for

collaborators

5 papers

quant-ph2021★ 2 cited

Inverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface

I. D. Breev, Z. Shang, A. V. Poshakinskiy +11

Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon…

cond-mat.mtrl-sci2020★ 21 cited

Stress-controlled zero-field spin splitting in silicon carbide

I. D. Breev, A. V. Poshakinskiy, V. V. Yakovleva +6

We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures…

cond-mat.mtrl-sci2020★ 18 cited

Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy

I. D. Breev, K. V. Likhachev, V. V. Yakovleva +5

We grow AlN/4H-SiC and AlN/6H-SiC heterostructures by physical vapor deposition and characterize the heterointerface with nanoscale resolution. Furthermore, we investigate the spat…

cond-mat.mtrl-sci2020★ 17 cited

Electron nuclear interactions and electronic structure of spin 3/2 color centers in silicon carbide: A high-field pulse EPR and ENDOR study

V. A. Soltamov, B. V. Yavkin, A. N. Anisimov +4

High-frequency pulse electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) were used to clarify the electronic structure of the color centers with an…

quant-ph2020★ 11 cited

Optical spin initialization of spin-3/2 silicon vacancy centers in 6H-SiC at room temperature

Harpreet Singh, Andrei N. Anisimov, I. D. Breev +2

Silicon vacancies in silicon carbide have been proposed as an alternative to nitrogen vacancy centers in diamonds for spintronics and quantum technologies. An important preconditio…