17 citations · 46 across the 6 of their papers we have counts for
6 papers
Charge states, triple points and quadruple points in an InAs nanowire triple quantum dot revealed by an integrated charge sensor
Weijie Li, Zhihai Liu, Jingwei Mu +4
A serial triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized from an InAs nanowire via a fine finger-gate technique. The complex charge states and…
Charge detection of a quantum dot under different tunneling barrier symmetries and bias voltages
Jingwei Mu, Weijie Li, Shaoyun Huang +5
We report on the realization of a coupled quantum dot (QD) system containing two single QDs made in two adjacent InAs nanowires. One QD (sensor QD) is used as a charge sensor to de…
A double quantum dot defined by top gates in a single crystalline InSb nanosheet
Yuanjie Chen, Shaoyun Huang, Jingwei Mu +3
We report on the transport study of a double quantum dot (DQD) device made from a freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by molecular…
Highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire
Jingwei Mu, Shaoyun Huang, Zhi-Hai Liu +7
Quantum dots (QDs) made from semiconductors are among the most promising platforms for the developments of quantum computing and simulation chips, and have advantages over other pl…
Detection of charge states of an InAs nanowire triple quantum dot with an integrated nanowire charge sensor
Weijie Li, Jingwei Mu, Shaoyun Huang +3
A linear triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized. The TQD and the charge sensor are built from two adjacent InAs nanowires by fine fin…
Measurements of anisotropic g-factors for electrons in InSb nanowire quantum dots
Jingwei Mu, Shaoyun Huang, Ji-Yin Wang +3
We have measured the Zeeman splitting of quantum levels in few-electron quantum dots (QDs) formed in narrow bandgap InSb nanowires via the Schottky barriers at the contacts under a…