5 citations · 7 across the 8 of their papers we have counts for
8 papers
Localized orbitals and tunnel couplings from general confinement potentials in gate-defined quantum-dot arrays
Bohdan Khromets, William Chow, Jonathan Baugh
Efficient simulation of dense gate-defined multi-quantum-dot arrays requires accurate and scalable modeling methods, compatible with asymmetries and imperfections of realistic volt…
Impact of gate-voltage noise on silicon spin-qubit variational quantum eigensolvers
Xinning Wang, Bohdan Khromets, Zachery Merino +1
Quantum computers offer a route to outperform classical methods in tasks such as molecular simulation, motivating hybrid algorithms like the Variational Quantum Eigensolver (VQE) f…
Electroluminescence in dopant-free GaAs/AlGaAs single heterojunctions: 2D free excitons, H-band, and the tidal effect
N. Sherlekar, S. R. Harrigan, L. Tian +9
Bright electroluminescence (EL) from dopant-free ambipolar lateral p-n junctions in GaAs/AlGaAs single heterointerface (SH) heterostructures is used to probe neutral free excitons…
Quantum optimal control robust to noises using fractional calculus: voltage-controlled exchange in semiconductor spin qubits
Bohdan Khromets, Jonathan Baugh
Low-frequency charge noise significantly hinders the performance of voltage-controlled spin qubits in quantum dots. Here, we utilize fractional calculus to design voltage c…
Simulated Charge Stability in a MOSFET Linear Quantum Dot Array
Zach D. Merino, Bohdan Khromets, Jonathan Baugh
In this study, we address challenges in designing quantum information processors based on electron spin qubits in electrostatically-defined quantum dots (QDs). Numerical calculatio…
Hamiltonian engineering with time-ordered evolution for unitary control of electron spins in semiconductor quantum dots
Bohdan Khromets, Zach D. Merino, Jonathan Baugh
We present a unitary control pulse design method for a scalable quantum computer architecture based on electron spins in lateral quantum dots. We employ simultaneous control of spi…
Observation of an Abrupt 3D-2D Morphological Transition in Thin Al Layers Grown by MBE on InGaAs surface
A. Elbaroudy, B. Khromets, F. Sfigakis +7
Among superconductor/semiconductor hybrid structures, in-situ aluminum (Al) grown on InGaAs/InAs is widely pursued for the experimental realization of Majorana Zero Mode quasiparti…
Optimizing lateral quantum dot geometries for reduced exchange noise
Brandon Buonacorsi, Marek Korkusinski, Bohdan Khromets +1
For electron spin qubits in quantum dots, reducing charge noise sensitivity is a critical step in achieving fault tolerant two-qubit gates mediated by the exchange interaction. Thi…