8 citations · 10 across the 3 of their papers we have counts for
3 papers
Low-threshold operation of GaAs-based (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well lasers emitting in the O-band
Christian Fuchs, Imad Limame, Stefan Reinhard +6
The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose…
Performance characteristics of low threshold current 1.25-μm type-II GaInAs/GaAsSb W-lasers for optical communications
Dominic A. Duffy, Igor P. Marko, Christian Fuchs +4
Type-II W-lasers have made an important contribution to the development of mid-infrared laser diodes. In this paper, we show that a similar approach can yield high performance lase…
The influence of growth interruption on the luminescence properties of Ga(As,Sb)-based type II heterostructures
Luise Rost, Jannik Lehr, Milan Maradiya +4
The influence of growth interruption on the luminescence properties of the Ga(As,Sb)/GaAs interface have been studied by continous wave and time resolved photoluminescence spectros…