activity
20182023
most citedAchieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

1 citations · 2 across the 9 of their papers we have counts for

collaborators

9 papers

physics.optics2023★ 1 cited

Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

Wayesh Qarony, Ahmed S. Mayet, Ekaterina Ponizovskaya Devine +8

The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum, and it drops rapidly beyond 800 nm in near-infrared wavelengths. Herein, we have exp…

physics.optics2022

Optimizing the light penetration depth in APDs and SPADs for high gain-bandwidth and ultra-wide spectral response

Ahasan Ahamed, Cesar Bartolo-Perez, Ahmed Sulaiman Mayet +7

Controlling light penetration depth in Avalanche Photodiodes (APDs) and Single Photon Avalanche Diodes (SPADs) play a major role in achieving high multiplication gain by delivering…

physics.optics2022

Reconstruction-based spectroscopy using CMOS image sensors with random photon-trapping nanostructure per sensor

Ahasan Ahamed, Cesar Bartolo-Perez, Ahmed Sulaiman Mayet +4

Optical spectrometers are widely used scientific equipment with many applications involving material characterization, chemical analysis, disease diagnostics, surveillance, etc. Em…

eess.SY2021

A Natural Language Processing and Deep Learning based Model for Automated Vehicle Diagnostics using Free-Text Customer Service Reports

Ali Khodadadi, Soroush Ghandiparsi, Chen-Nee Chuah

Initial fault detection and diagnostics are imperative measures to improve the efficiency, safety, and stability of vehicle operation. In recent years, numerous studies have invest…

physics.optics2021

Optimization of CMOS image sensors with single photon-trapping hole per pixel for enhanced sensitivity in near-infrared

E. Ponizovskaya Devine, Ahasan Ahamed, Ahmed S. Mayet +7

The optimization of silicon photodiode-based CMOS sensors with backside-illumination for 300-1000 nm wavelength range was studied. It was demonstrated that a single hole on a photo…

physics.optics2020

Maximizing absorption in photon trapping ultra-fast silicon photodetectors

Cesar Bartolo-Perez, Wayesh Qarony, Soroush Ghandiparsi +9

Silicon photodetectors operating at near-infrared wavelengths with high-speed and high sensitivity are becoming critical for emerging applications, such as Light Detection and Rang…

physics.optics2020

Single Microhole per Pixel in CMOS Image Sensor with Enhanced Optical Sensitivity in Near-Infrared

E. Ponizovskaya Devine, Wayesh Qarony, Ahasan Ahamed +7

Silicon photodiode based CMOS sensors with backside-illumination for 300 to 1000 nm wavelength range were studied. We showed that a single hole in the photodiode increases the opti…

physics.app-ph2018

Quantum efficiency enhancement of mid infrared photodetectors with photon trapping micro-structures

Ekaterina Ponizovskaya Devine, Hilal Cansizoglu, Yang Gao +5

The study proposes to use the photon trapping micro-structures to enhance quantum efficiency of the mid infrared photodetectors. The nanostructure that is consist of micro holes re…

physics.app-ph2018★ 1 cited

Optimization of light trapping micro-hole structure for high-speed high-efficiency silicon photodiodes

Ekaterina Ponizovskaya Devine, Hilal Cansizoglu, Yang Gao +8

We optimized micro-holes in a thin slab for fast Si photodetectors at wavelength 800-950nm. Lateral modes are shown to be responsible for the effective light trapping. Small disord…