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20202022
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physics.optics2022

Optimizing the light penetration depth in APDs and SPADs for high gain-bandwidth and ultra-wide spectral response

Ahasan Ahamed, Cesar Bartolo-Perez, Ahmed Sulaiman Mayet +7

Controlling light penetration depth in Avalanche Photodiodes (APDs) and Single Photon Avalanche Diodes (SPADs) play a major role in achieving high multiplication gain by delivering…

physics.optics2022

Reconstruction-based spectroscopy using CMOS image sensors with random photon-trapping nanostructure per sensor

Ahasan Ahamed, Cesar Bartolo-Perez, Ahmed Sulaiman Mayet +4

Optical spectrometers are widely used scientific equipment with many applications involving material characterization, chemical analysis, disease diagnostics, surveillance, etc. Em…

physics.optics2021

Optimization of CMOS image sensors with single photon-trapping hole per pixel for enhanced sensitivity in near-infrared

E. Ponizovskaya Devine, Ahasan Ahamed, Ahmed S. Mayet +7

The optimization of silicon photodiode-based CMOS sensors with backside-illumination for 300-1000 nm wavelength range was studied. It was demonstrated that a single hole on a photo…

physics.optics2021

Avalanche Photodetectors with Photon Trapping Structures for Biomedical Imaging Applications

Cesar Bartolo-Perez, Soroush Ghandiparsi, Ahmed S. Mayet +8

Enhancing photon detection efficiency and time resolution in photodetectors in the entire visible range is critical to improve the image quality of time-of-flight (TOF)-based imagi…

physics.optics2020

Maximizing absorption in photon trapping ultra-fast silicon photodetectors

Cesar Bartolo-Perez, Wayesh Qarony, Soroush Ghandiparsi +9

Silicon photodetectors operating at near-infrared wavelengths with high-speed and high sensitivity are becoming critical for emerging applications, such as Light Detection and Rang…

physics.optics2020

Single Microhole per Pixel in CMOS Image Sensor with Enhanced Optical Sensitivity in Near-Infrared

E. Ponizovskaya Devine, Wayesh Qarony, Ahasan Ahamed +7

Silicon photodiode based CMOS sensors with backside-illumination for 300 to 1000 nm wavelength range were studied. We showed that a single hole in the photodiode increases the opti…