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cond-mat.mes-hall2024★ 3 cited
On the origin of anomalous hysteresis in graphite/boron nitride transistors
Dacen Waters, Derek Waleffe, Ellis Thompson +9
Field-effect devices constructed by stacking flakes of van der Waals (vdW) materials, with hexagonal boron nitride (hBN) playing the role of gate dielectric, often exhibit virtuall…
cond-mat.mes-hall2024
Unconventional Unidirectional Magnetoresistance in vdW Heterostructures
I-Hsuan Kao, Junyu Tang, Gabriel Calderon Ortiz +13
Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer syst…