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Haiyan Wang

4 papers hereh-index 344.3k citations152 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author4

Across the 4 of 4 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci3
  • physics.app-ph1
same name
  • Haiyan Wang — 17 papers, h 16
  • Haiyan Wang — 13 papers, h 7
  • Haiyan Wang — 8 papers, h 26
  • Haiyan Wang — 8 papers, h 13
  • Haiyan Wang — 6 papers, h 6
  • Haiyan Wang — 4 papers, h 19

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

most citedWhy In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors?

223 citations · 247 across the 3 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

3 papers · 1 filter

cond-mat.mtrl-sci2021

A generalized 3D elastic model for nanoscale, self-assembled oxide-metal thin films with pillar-in-matrix configurations

Kyle Starkey, Ahmad Ahmad, Juanjuan Lu +2

In recent years, functional oxide-metal based vertically aligned nanocomposite (VAN) thin films have gained interest due to their intriguing physical properties and multifunctional…

cond-mat.mtrl-sci2020★ 223 cited

Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors?

Mengwei Si, Yaoqiao Hu, Zehao Lin +7

In this work, we demonstrate enhancement-mode field-effect transistors by atomic-layer-deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is found to…

cond-mat.mtrl-sci2020

Role of ALD Al2O3 surface passivation on the performance of p-type Cu2O thin film transistors

Mari Napari, Tahmida N. Huq, David J. Meeth +10

High-performance p-type oxide thin film transistors (TFTs) have great potential for many semiconductor applications. However, these devices typically suffer from low hole mobility…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.