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20212026
most citedHighly uniform GaSb quantum dots with indirect-direct bandgap crossover at telecom range

18 citations · 53 across the 8 of their papers we have counts for

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cond-mat.mes-hall2026

Predictive wavelength tailoring of uniform GaSb-based quantum dots for emission at 1.55 um

Markus Peil, Maja Wasiluk, Ziemowit Olinkiewicz +11

A detailed study of emission wavelength tailoring of GaSb-based QDs formed by InGaSb-filling of droplet-etched nanoholes in AlGaSb is presented. The study shows that the emission w…

cond-mat.mes-hall2024

Telecom wavelength single-photon emission from quasi-resonantly excited InGaSb/AlGaSb quantum dots

Teemu Hakkarainen, Joonas Hilska, Arttu Hietalahti +10

Deterministic light sources capable of generating quantum states on-demand at wavelengths compatible with fiber optics and atmospheric transmission windows are essential for practi…

cond-mat.mes-hall2023

Electronic structure of GaSb/AlGaSb quantum dots formed by filling droplet-etched nanoholes

Lucie Leguay, Abhiroop Chellu, Joonas Hilska +4

Epitaxially-grown semiconductor quantum dots (QDs) provide an attractive platform for the development of deterministic sources of high-quality quantum states of light. Such non-cla…

cond-mat.mes-hall2023★ 17 cited

Strain-free GaSb quantum dots as single-photon sources in the telecom S-band

Johannes Michl, Giora Peniakov, Andreas Pfenning +7

Creating single photons in the telecommunication wavelength range from semiconductor quantum dots (QDs) and interfacing them with spins of electrons or holes has been of high inter…

cond-mat.mes-hall2021★ 18 cited

Highly uniform GaSb quantum dots with indirect-direct bandgap crossover at telecom range

Abhiroop Chellu, Joonas Hilska, Jussi-Pekka Penttinen +1

We demonstrate a new quantum-confined semiconductor material based on GaSb quantum dots (QDs) embedded in single-crystalline AlGaSb matrix by filling droplet-etched nanoholes. The…