1 citations · 1 across the 1 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2021★ 1 cited
A CMOS Compatible Aluminum Scandium Nitride-based Ferroelectric Tunnel Junction Memristor
Xiwen Liu, Jeffrey Zheng, Dixiong Wang +4
We report a complementary metal oxide semiconductor (CMOS) technology compatible ferroelectric tunnel junction memristor grown directly on top of a Silicon substrate using a scandi…
physics.app-ph2020
Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor
Xiwen Liu, Dixiong Wang, Jeffrey Zheng +5
In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a…