3 papers
cond-mat.mtrl-sci2026
Improving feature resolution and pore back effect in focused ion beam tomography of porous GaN thin films
Ben Thornley, Thom R. Harris-Lee, Menno J. Kappers +2
Porous gallium nitride (GaN) is a mesoporous crystalline material, typically in the form of a thin film on an unlike substrate, prepared by electrochemically etching conductive GaN…
cond-mat.mtrl-sci2026
A stochastic simulation of the dislocation-mediated etching of porous GaN distributed Bragg reflectors
Piotr Sokolinski, Ben Thornley, Zetai Xu +3
Distributed Bragg reflectors (DBRs) can be fabricated by electrochemically etching nitride epitaxial structures consisting of alternating layers of highly n-type doped and non-inte…
cond-mat.mtrl-sci2025
A cascade model for the defect-driven etching of porous GaN distributed Bragg reflectors
Ben Thornley, Maruf Sarkar, Saptarsi Ghosh +4
Fabrication of porous GaN distributed Bragg reflectors (DBRs) via the selective electrochemical etching (ECE) of conductive Si-doped layers, separated by non-intentionally doped (N…