29 citations · 37 across the 4 of their papers we have counts for
4 papers
Wafer-scale detachable monocrystalline Germanium nanomembranes for the growth of III-V materials and substrate reuse
Nicolas Paupy, Zakaria Oulad Elhmaidi, Alexandre Chapotot +32
Germanium (Ge) is increasingly used as a substrate for high-performance optoelectronic, photovoltaic, and electronic devices. These devices are usually grown on thick and rigid Ge…
Defect free strain relaxation of microcrystals on mesoporous patterned silicon
Alexandre Heintz, Bouraoui Ilahi, Alexandre Pofelski +7
A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel functi…
Dynamic formation of spherical voids crossing linear defects
Youcef A. Bioud, Maxime Rondeau, Abderraouf Boucherif +3
A predictive model for the evolution of porous Ge layer upon thermal treatment is reported. We represent an idealized etched dislocation core as an axially symmetric elongated hole…
Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids
Youcef A. Bioud, Abderraouf Boucherif, Etienne Paradis +3
A low-cost method to reduce the threading disloca-tions density (TDD) in relaxed germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate was treate…