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cond-mat.mtrl-sci2021
Dynamic formation of spherical voids crossing linear defects
Youcef A. Bioud, Maxime Rondeau, Abderraouf Boucherif +3
A predictive model for the evolution of porous Ge layer upon thermal treatment is reported. We represent an idealized etched dislocation core as an axially symmetric elongated hole…
cond-mat.mtrl-sci2018
Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids
Youcef A. Bioud, Abderraouf Boucherif, Etienne Paradis +3
A low-cost method to reduce the threading disloca-tions density (TDD) in relaxed germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate was treate…