10 citations · 15 across the 5 of their papers we have counts for
5 papers
Unlocking extreme doping and strain in epitaxial monocrystalline silicon
Léonard Desvignes, Dominique Débarre, Ludovic Largeau +8
Hyperdoping, overcoming the solubility limit of dopants in a crystalline semiconductor, is a fertile method for the enhancement of the electrical, structural and optical devices' p…
Tuning superconductivity in nanosecond laser annealed boron doped epilayers
S. Nath, I. Turan, L. Desvignes +8
Superconductivity in ultra-doped epilayers is demonstrated by nanosecond laser doping, which allows introducing substitutional B concentrations well above the so…
STEM analysis of deformation and B distribution in nanosecond laser ultra-doped Si B
G. Hallais, G. Patriarche, L. Desvignes +2
We report on the structural properties of highly B-doped silicon (> 2 at. %) realised by nanosecond laser doping. We investigate the crystalline quality, deformation and B distribu…
Evidence of boron pairs in highly boron laser doped silicon
Léonard Desvignes, Francesca Chiodi, Géraldine Hallais +5
Secondary Ions Mass Spectroscopy and Hall effect measurements were performed on boron doped silicon with concentration between 0.02 at.% and 12 at.%. Ultra-high boron doping was ma…
Tunable high speed atomic rotor in BiSe revealed by current noise
Léonard Desvignes, Vasily S. Stolyarov, Marco Aprili +1
The ability to manipulate individual atoms and molecules using a scanning tunnelling microscope (STM) has been crucial for the development of a vast array of atomic scale devices a…