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CoMnZ (Z = Al, Si, Ga, Ge, Sn) Heusler alloys as candidate materials for spintronic and microelectronic applications: Electronic structure, transport, and magnetism
Vyacheslav V. Marchenkov, Alena A. Semiannikova, Evgenii D. Chernov +4
Magnetic and electronic transport properties of CoMnZ (Z = Al, Ga, Ge, Si, Sn) Heusler alloys were experimentally investigated. Electrical resistivity, in the temperature range…
Electronic transport and Fermi surface of Weyl semimetal WTe2: quantum oscillations and first-principles study
B. M. Fominykh, A. N. Perevalova, S. T. Baidak +4
Currently, topological semimetals are being actively investigated from both theoretical and experimental perspectives due to their unique physical properties, including topological…
Electronic, magnetic and galvanomagnetic properties of Co-based Heusler alloys: possible states of a half-metallic ferromagnet and spin gapless semiconductor
A. A. Semiannikova, Yu. A. Perevozchikova, V. Yu Irkhin +3
Parameters of the energy gap and, consequently, electronic, magnetic and galvanomagnetic properties in different XYZ Heusler alloys can vary quite strongly. In particular, half…