Hiroki Ogura

most citedEmergence of low-energy electronic states in oxygen-controlled Mott insulator Ca

_{2}

RuO

_{4 + δ}

5 citations · 7 across the 2 of their papers we have counts for

collaborators

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cond-mat.str-el2025★ 2 cited

Metallisation of the Mott Insulator Ca $_{2}$ RuO $_{4}$ using Electric Double-Layer Gating

Tatsuhiro Sakami, Hiroki Ogura, Akihiro Ino +3

To verify whether the Mott insulator Ca2RuO4 can be switched by applying electric-field alone, regardless of current flow, we employ metallisation using electric double-layer gatin…

cond-mat.str-el2021★ 5 cited

Emergence of low-energy electronic states in oxygen-controlled Mott insulator Ca $_{2}$ RuO $_{4 + δ}$

Takeo Miyashita, Hideaki Iwasawa, Tomoki Yoshikawa +7

Insulator-to-metal transition in Ca $_{2}$ RuO $_{4}$ has drawn keen attention because of its sensitivity to various stimulation and its potential controllability. Here, we report a d…

Metallisation of the Mott Insulator Ca2​RuO4​ using Electric Double-Layer Gating

Emergence of low-energy electronic states in oxygen-controlled Mott insulator Ca2​RuO4+δ​

Metallisation of the Mott Insulator Ca $_{2}$ RuO $_{4}$ using Electric Double-Layer Gating

Emergence of low-energy electronic states in oxygen-controlled Mott insulator Ca $_{2}$ RuO $_{4 + δ}$