42 citations · 42 across the 3 of their papers we have counts for
3 papers
Integration of 3-level MoS multi-bridge channel FET with 2D layered contact and gate dielectric
Hitesh S, Pushkar Dasika, Kenji Watanabe +2
Multi-bridge channel field effect transistor (MBCFET) provides several advantages over FinFET technology and is an attractive solution for sub-5 nm technology nodes. MBCFET is a na…
Electrically Tunable Localized versus Delocalized Intralayer Moiré Excitons and Trions in a Twisted MoS Bilayer
Medha Dandu, Garima Gupta, Pushkar Dasika +3
Moiré superlattice-induced sub-bands in twisted van der Waals homo- and hetero-structures govern their optical and electrical properties, rendering additional degrees of freedom su…
Contact-Barrier Free, High Mobility, Dual-Gated Junctionless Transistor Using Tellurium Nanowire
Pushkar Dasika, Debadarshini Samantaray, Krishna Murali +5
Gate-all-around nanowire transistor, due to its extremely tight electrostatic control and vertical integration capability, is a highly promising candidate for sub-5 nm technology n…