activity
20212026
most citedContact-Barrier Free, High Mobility, Dual-Gated Junctionless Transistor Using Tellurium Nanowire

42 citations · 59 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2026

Confined exciton polaron in MoS on twisted-hBN

Garima Gupta, Mayank Chhaperwal, Pankaj Kumar +5

The simple electrostatic picture of a trion is that of an excess charge inducing an exciton polarization and binding closer (farther) to the hole (electron) side of it. Trion forma…

quant-ph2026

Low-dimensional platforms for single photon detection

Pushkar Dasika, Liza Jain, Varun Srivatsav Kondapally +3

A Single-Photon Detector (SPD) can detect extremely low intensity of electromagnetic wave - down to a single photon. Driven by the rapid developments in quantum information science…

cond-mat.mes-hall2023★ 17 cited

Harmonic to anharmonic tuning of moiré potential leading to unconventional Stark effect and giant dipolar repulsion in WS/WSe heterobilayer

Suman Chatterjee, Medha Dandu, Pushkar Dasika +6

Excitonic states trapped in harmonic moiré wells of twisted heterobilayers is an intriguing testbed. However, the moiré potential is primarily governed by the twist angle, and its…

cond-mat.mes-hall2022

Integration of 3-level MoS multi-bridge channel FET with 2D layered contact and gate dielectric

Hitesh S, Pushkar Dasika, Kenji Watanabe +2

Multi-bridge channel field effect transistor (MBCFET) provides several advantages over FinFET technology and is an attractive solution for sub-5 nm technology nodes. MBCFET is a na…

cond-mat.mes-hall2022

Electrically Tunable Localized versus Delocalized Intralayer Moiré Excitons and Trions in a Twisted MoS Bilayer

Medha Dandu, Garima Gupta, Pushkar Dasika +3

Moiré superlattice-induced sub-bands in twisted van der Waals homo- and hetero-structures govern their optical and electrical properties, rendering additional degrees of freedom su…

cond-mat.mes-hall2021★ 42 cited

Contact-Barrier Free, High Mobility, Dual-Gated Junctionless Transistor Using Tellurium Nanowire

Pushkar Dasika, Debadarshini Samantaray, Krishna Murali +5

Gate-all-around nanowire transistor, due to its extremely tight electrostatic control and vertical integration capability, is a highly promising candidate for sub-5 nm technology n…