most citedUniform Spin Qubit Devices in an All-Silicon 300 mm Integrated Process

20 citations · 28 across the 3 of their papers we have counts for

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cond-mat.mes-hall2021★ 20 cited

Uniform Spin Qubit Devices in an All-Silicon 300 mm Integrated Process

N. I. Dumoulin Stuyck, R. Li, C. Godfrin +12

Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity and tunability from 3…

cond-mat.mes-hall2021★ 1 cited

A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration

R. Li, N. I. Dumoulin Stuyck, S. Kubicek +12

We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modificat…