All-nitride and In-free Al${}_x$Ga${}_{1-x}$N:Mn/GaN distributed Bragg reflectors for the near-infrared

G. Capuzzo, D. Kysylychyn, R. Adhikari +4

Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not o…