Giant Anisotropic Magnetoresistance in Magnetic Monolayers CrPX3 (X = S, Se, Te) due to symmetry breaking between the in-plane and out-of-plane crystallographic axes

W. S. Hou, M. Q. Dong, X. ZHang +1

Anisotropic magnetoresistance (AMR) has a crucial feature for developing highly sensitive sensors and innovative memory devices. While extensively studied in bulk materials, AMR ef…