54 citations · 69 across the 2 of their papers we have counts for
2 papers
physics.app-ph2024★ 15 cited
Buffer-less Gallium Nitride High Electron Mobility Heterostructures on Silicon
Saptarsi Ghosh, Martin Frentrup, Alexander M. Hinz +5
Thick metamorphic buffers are perceived to be indispensable for the heteroepitaxial integration of III-V semiconductors on silicon substrates with large thermal expansion and latti…
physics.app-ph2021★ 54 cited
Thermal stress modelling of diamond on GaN/III-Nitride membranes
Jerome A. Cuenca, Matthew D. Smith, Daniel E. Field +8
Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate potential, however, chemica…