29 citations · 119 across the 15 of their papers we have counts for
15 papers
Strongly coupled interface electronic states and interface phonon mode at GaP/Si(001)
Gerson Mette, Kunie Ishioka, Steven Youngkin +3
Ultrafast carrier and phonon dynamics at the buried heterointerface of GaP/Si(001) are investigated by means of two-color pump-probe reflectivity measurements. The carrier-induced…
Separation of interface and substrate carrier dynamics at a heterointerface based on coherent optical phonons
Kunie Ishioka, Ethan Angerhoffer, Christopher J. Stanton +4
Transient reflectivity spectroscopy is widely used to study ultrafast carrier- and phonon-dynamics in semiconductors. In their heterostructures, it is often not straightforward to…
Two-chip power-scalable THz-generating semiconductor disk laser
Heyang Guoyu, Christian Kriso, Fan Zhang +4
We demonstrate a compact two-chip terahertz-emitting vertical-external-cavity surface-emitting laser (TECSEL) source, which provides 1-THz output based on intracavity frequency con…
Low-threshold operation of GaAs-based (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well lasers emitting in the O-band
Christian Fuchs, Imad Limame, Stefan Reinhard +6
The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose…
Frequency-modulated comb in a VECSEL
Christian Kriso, Avijit Barua, Obaid Mohiuddin +5
Optical frequency combs based on mode-locked lasers have revolutionized many areas of science and technology, such as precision metrology, optical frequency synthesis or telecommun…
Temperature-dependent spectral properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructure lasers
Christian Fuchs, Ada Baeumner, Anja Brueggemann +7
This paper discusses the temperature-dependent properties of (GaIn)As/Ga(AsSb)/(GaIn)As W-quantum well heterostructures for laser applications based on theoretical modeling as well…
Performance characteristics of low threshold current 1.25-μm type-II GaInAs/GaAsSb W-lasers for optical communications
Dominic A. Duffy, Igor P. Marko, Christian Fuchs +4
Type-II W-lasers have made an important contribution to the development of mid-infrared laser diodes. In this paper, we show that a similar approach can yield high performance lase…
The influence of growth interruption on the luminescence properties of Ga(As,Sb)-based type II heterostructures
Luise Rost, Jannik Lehr, Milan Maradiya +4
The influence of growth interruption on the luminescence properties of the Ga(As,Sb)/GaAs interface have been studied by continous wave and time resolved photoluminescence spectros…
Coherent optical and acoustic phonons generated at lattice-matched GaP/Si(001) heterointerfaces
Kunie Ishioka, Andreas Beyer, Wolfgang Stolz +4
Thin GaP films can be grown on an exact Si(001) substrate with nearly perfect lattice match. We perform all-optical pump-probe measurements to investigate the ultrafast electron-ph…
Microcavity-enhanced Kerr nonlinearity in a vertical-external-cavity surface-emitting laser
C. Kriso, S. Kress, T. Munshi +7
Self-mode-locking has become an emerging path to the generation of ultrashort pulses with vertical-external-cavity surface-emitting lasers. In our work, a strong Kerr nonlinearity…
Ab initio calculations of the concentration dependent band gap reduction in dilute nitrides
Phil Rosenow, Lars C. Bannow, Eric W. Fischer +4
While being of persistent interest for the integration of lattice-matched laser devices with silicon circuits, the electronic structure of dilute nitride III/V-semiconductors has p…
Sub-picosecond acoustic pulses at buried GaP/Si interfaces
Kunie Ishioka, Avinash Rustagi, Andreas Beyer +5
We report on the optical generation and detection of ultrashort acoustic pulses that propagate in three-dimensional semiconductor crystals. Photoexcitaiton of lattice-matched GaP l…
Direct Characterization of Band Bending in GaP/Si(001) Heterostructures with Hard X-ray Photoelectron Spectroscopy
Martin Schmid, Kunie Ishioka, Andreas Beyer +9
We apply hard X-ray photoelectron spectroscopy (HAXPES) to investigate the electronic structures in ~50-nm thick epitaxial GaP layers grown on Si(001) under different conditions. D…
Gain spectroscopy of a type-II VECSEL chip
Christian Lammers, Markus Stein, Christian Berger +9
Using optical pump-white light probe spectroscopy the gain dynamics is investigated for a VECSEL chip which is based on a type-II heterostructure. The active region the chip consis…
Semiconductor resonator solitons above band gap
V. B. Taranenko, C. O. Weiss, W. Stolz
We show experimentally the existence of bright and dark spatial solitons in semiconductor resonators for excitation above the band gap energy. These solitons can be switched on, bo…