70 citations · 146 across the 9 of their papers we have counts for
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quant-ph2021★ 10 cited
Hyperfine-mediated transitions between electronic spin-1/2 levels of transition metal defects in SiC
Carmem M. Gilardoni, Irina Ion, Freddie Hendriks +2
Transition metal defects in SiC give rise to localized electronic states that can be optically addressed in the telecom range in an industrially mature semiconductor platform. This…
quant-ph2019★ 23 cited
Spin-relaxation times exceeding seconds for color centers with strong spin-orbit coupling in SiC
Carmem M. Gilardoni, Tom Bosma, Danny van Hien +6
Spin-active color centers in solids show good performance for quantum technologies. Several transition-metal defects in SiC offer compatibility with telecom and semiconductor indus…