2 papers
physics.optics2024
Comparative Study of InGaAs and GaAsSb Nanowires for Room Temperature Operation of Avalanche Photodiodes at 1.55 μm
Shrivatch Sankar, Punam Murkute, Micah Meleski +6
III V semiconductor nanowire based photodetectors have significant potential for remote sensing and LiDAR applications, particularly due to their ability to operate at 1.55 μm. Ac…
physics.app-ph2024
Active Interface Characteristics of Heterogeneously Integrated GaAsSb/Si Photodiodes
Manisha Muduli, Yongkang Xia, Seunghyun Lee +6
There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on…