Non-Uniform Quantum Well and Barrier Thickness Engineering for Robust Ultra-High TER and Low RA Ferroelectric Tunnel Junctions

Balram Khattar, Adarsh Tripathi, Manish Anand +1

HfO${}_2$-based ferroelectric tunnel junctions (FTJs) are promising candidates for scalable non-volatile memory, but simultaneously achieving a high tunneling electro-resistance rati…