collaborators

1 paper

cond-mat.mtrl-sci2024

Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab

Jerome Mitard, Luka Kljucar, Nouredine Rassoul +19

Back and double gate IGZO nFETs have been demonstrated down to 120nm and 70nm respectively leveraging 300mm fab processing. While the passivation of oxygen vacancies in IGZO is cha…